Explanation of Materials Conducting Electricity
– Materials conduct electricity if they contain mobile charge carriers.
– Semiconductors have two types of charge carriers: free electrons and electron holes.
– A reverse-biased diode can release a mobile electron-hole pair called an exciton.
– In the presence of an electric field, the electron moves towards positive voltage and the hole moves towards negative voltage.
– Strong electric fields can accelerate mobile electrons or holes, creating more free charge carriers and leading to avalanche breakdown.
Factors Leading to Breakdown
– Large voltage drop and current during breakdown generate heat.
– Diodes in reverse blocking power applications can be destroyed if the external circuit allows a large current.
– Avalanche diodes, like high voltage Zener diodes, break down at a uniform voltage and avoid current crowding.
– Avalanche diodes can sustain a moderate level of current during breakdown.
– Breakdown voltage is the voltage at which breakdown occurs.
Comparison to Zener Diodes
– Avalanche breakdown can cause the material to continue conducting even if the voltage drops below the breakdown voltage.
– Zener diodes stop conducting once the reverse voltage drops below the breakdown voltage.
– Avalanche breakdown involves the passage of electrons and does not necessarily damage the crystal.
– Zener breakdown is a different type of breakdown mechanism.
– Avalanche diodes are commonly encountered as high voltage Zener diodes.
Related Concepts and Devices
– QBD (electronics) is related to avalanche breakdown.
– Single-photon avalanche diodes are relevant to this topic.
– Spark gaps are related to breakdown phenomena.
– Zener breakdown is another type of breakdown mechanism.
– Various references provide further information on avalanche breakdown.
References
– ‘Microelectronic Circuit Design’ by Richard C Jaeger.
– ‘The Art of Electronics’ by Horowitz & Hill.
– University of Colorado guide to Advanced MOSFET design (Archived 2006-02-08).
– McKay, K. (1954). ‘Avalanche Breakdown in Silicon.’ Physical Review, 94(4), 877–884.
– Power MOSFET avalanche characteristics and ratings – ST Application Note AN2344.
– Power MOSFET Avalanche Design Guidelines – Vishay Application Note AN-1005.
– Retrieved from https://en.wikipedia.org/w/index.php?title=Avalanche_breakdown&oldid=1188252065 Source: https://en.wikipedia.org/wiki/Avalanche_breakdown
Avalanche breakdown (or avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche. The avalanche process occurs when carriers in the transition region are accelerated by the electric field to energies sufficient to create mobile or free electron-hole pairs via collisions with bound electrons.
This article includes a list of references, related reading, or external links, but its sources remain unclear because it lacks inline citations. (October 2015) |
